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Manufacturer	ONSEMI
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	900V
Drain current	1.08A
Pulsed drain current	6.8A
Power dissipation	50W
Case	DPAK
Gate-source voltage	±30V
On-state resistance	7.2Ω
Mounting	SMD
Gate charge	15nC
Kind of package	reel, tape
Kind of channel	enhancement

FQD2N90TM

Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK

Specification

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