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FQP3N80C

Transistor: N-MOSFET; unipolar; 800V; 1.9A; Idm: 12A; 107W; TO220AB

Product family

Manufacturer: ONSEMI

Manufacturer part number:
FQP3N80C
TME Symbol:
FQP3N80C

Specification

Manufacturer
ONSEMI
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
800V
Drain current
1.9A
Pulsed drain current
12A
Power dissipation
107W
Case
TO220AB
Gate-source voltage
±30V
On-state resistance
4.8Ω
Mounting
THT
Gate charge
16.5nC
Kind of package
tube
Kind of channel
enhancement
Gross weight2 g
Certificates
See other products in this category: THT N channel transistors ONSEMI,
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FQP3N80C
0 in TME stock
Net price for quantities from 1 pcs - 1.38 USDGross price for quantities from 1 pcs - 1.38 USD
Net price for quantities from 3 pcs - 1.24 USDGross price for quantities from 3 pcs - 1.24 USD
Net price for quantities from 10 pcs - 1.09 USDGross price for quantities from 10 pcs - 1.09 USD
Net price for quantities from 50 pcs - 0.98 USDGross price for quantities from 50 pcs - 0.98 USD
Net price for quantities from 250 pcs - 0.91 USDGross price for quantities from 250 pcs - 0.91 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.