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FQT7N10LTF

Transistor: N-MOSFET; unipolar; 100V; 1.36A; 2W; SOT223

Documentation EN
Product family

Manufacturer: ONSEMI

Manufacturer part number:
FQT7N10LTF
TME Symbol:
FQT7N10LTF

Specification

Manufacturer
ONSEMI
Type of transistor
N-MOSFET
Technology
QFET®
Polarisation
unipolar
Drain-source voltage
100V
Drain current
1.36A
Power dissipation
2W
Case
SOT223
Gate-source voltage
±20V
On-state resistance
0.38Ω
Mounting
SMD
Gate charge
6nC
Kind of package
reel, tape
Kind of channel
enhancement
Gross weight0.153 g
Certificates
See other products in this category: SMD N channel transistors ONSEMI,
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FQT7N10LTF
2312 in TME stock
Net price for quantities from 1 pcs - 0.76 USDGross price for quantities from 1 pcs - 0.76 USD
Net price for quantities from 500 pcs - 0.39 USDGross price for quantities from 500 pcs - 0.39 USD
Net price for quantities from 1000 pcs - 0.36 USDGross price for quantities from 1000 pcs - 0.36 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Packaging method by the manufacturerReel = 4 000 pcs