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Manufacturer	INFINEON TECHNOLOGIES
Type of semiconductor module	IGBT
Semiconductor structure	single transistor
Max. off-state voltage	1.2kV
Collector current	900A
Case	AG-62MMES
Electrical mounting	screw
Gate-emitter voltage	±20V
Pulsed collector current	1.8kA
Power dissipation	4.3kW
Mechanical mounting	screw

FZ900R12KE4HOSA1

Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 900A; AG-62MMES

Specification