+1 500 000 products in offer

7000 packages per day

+300 000 clients from 150 countries

Quick Buy Favourites
Cart

No U.S. Customs – Order from TME with Confidence

Here you will find out more

GD10PJY120L2S

Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L2.2

Manufacturer: STARPOWER SEMICONDUCTOR

Manufacturer part number:
GD10PJY120L2S
TME Symbol:
GD10PJY120L2S

Specification

Manufacturer
STARPOWER SEMICONDUCTOR
Type of semiconductor module
IGBT
Semiconductor structure
diode/transistor
Topology
boost chopper, IGBT three-phase bridge OE output, NTC thermistor, three-phase diode bridge
Max. off-state voltage
1.2kV
Collector current
10A
Case
L2.2
Electrical mounting
Press-in PCB
Gate-emitter voltage
±20V
Pulsed collector current
20A
Technology
Advanced Trench FS IGBT
Mechanical mounting
screw
Gross weight24 g
Certificates
See other products in this category: IGBT modules STARPOWER SEMICONDUCTOR,
*
GD10PJY120L2S
0 in TME stock
Net price for quantities from 1 pcs - 32.01 USDGross price for quantities from 1 pcs - 32.01 USD
Net price for quantities from 3 pcs - 28.32 USDGross price for quantities from 3 pcs - 28.32 USD
Net price for quantities from 12 pcs - 25.43 USDGross price for quantities from 12 pcs - 25.43 USD
Net price for quantities from 24 pcs - 23.69 USDGross price for quantities from 24 pcs - 23.69 USD
No. of pieces (Multiplicity: 1)