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GD200HFU120C2S

Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A

Manufacturer: STARPOWER SEMICONDUCTOR

Manufacturer part number:
GD200HFU120C2S
TME Symbol:
GD200HFU120C2S

Specification

Manufacturer
STARPOWER SEMICONDUCTOR
Type of semiconductor module
IGBT
Semiconductor structure
transistor/transistor
Topology
IGBT half-bridge
Max. off-state voltage
1.2kV
Collector current
200A
Case
C2 62mm
Electrical mounting
FASTON connectors, screw
Gate-emitter voltage
±20V
Pulsed collector current
400A
Technology
NPT Ultra Fast IGBT
Mechanical mounting
screw
Gross weight300 g
Certificates
See other products in this category: IGBT modules STARPOWER SEMICONDUCTOR,
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GD200HFU120C2S
0 in TME stock
Net price for quantities from 1 pcs - 128.64 USDGross price for quantities from 1 pcs - 128.64 USD
Net price for quantities from 3 pcs - 113.61 USDGross price for quantities from 3 pcs - 113.61 USD
Net price for quantities from 12 pcs - 102.00 USDGross price for quantities from 12 pcs - 102.00 USD
No. of pieces (Multiplicity: 1)