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GD200HFX65C1S

Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A

Manufacturer: STARPOWER SEMICONDUCTOR

Manufacturer part number:
GD200HFX65C1S
TME Symbol:
GD200HFX65C1S

Specification

Manufacturer
STARPOWER SEMICONDUCTOR
Type of semiconductor module
IGBT
Semiconductor structure
transistor/transistor
Topology
IGBT half-bridge
Max. off-state voltage
650V
Collector current
200A
Case
C1 34mm
Electrical mounting
FASTON connectors, screw
Gate-emitter voltage
±20V
Pulsed collector current
400A
Technology
Trench FS IGBT
Mechanical mounting
screw
Gross weight150 g
Certificates
See other products in this category: IGBT modules STARPOWER SEMICONDUCTOR,
*
GD200HFX65C1S
0 in TME stock
No. of pieces (Multiplicity: 24)
Product for special order