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Manufacturer	STARPOWER SEMICONDUCTOR
Type of semiconductor module	IGBT
Semiconductor structure	diode/transistor
Topology	boost chopper, IGBT three-phase bridge OE output, NTC thermistor, three-phase diode bridge
Max. off-state voltage	1.2kV
Collector current	25A
Case	F2.0
Electrical mounting	Press-in PCB
Gate-emitter voltage	±20V
Pulsed collector current	50A
Technology	Advanced Trench FS IGBT
Mechanical mounting	screw

GD25PJY120F2S

Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0

Specification