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Manufacturer	STARPOWER SEMICONDUCTOR
Type of semiconductor module	IGBT
Semiconductor structure	diode/transistor
Topology	boost chopper, IGBT three-phase bridge OE output, NTC thermistor, three-phase diode bridge
Max. off-state voltage	650V
Collector current	30A
Case	F1.1
Electrical mounting	Press-in PCB
Gate-emitter voltage	±20V
Pulsed collector current	60A
Technology	Trench FS IGBT
Mechanical mounting	screw

GD30PJX65F1S

Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 30A

Specification