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GD50FSY120L3S

Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2

Manufacturer: STARPOWER SEMICONDUCTOR

Manufacturer part number:
GD50FSY120L3S
TME Symbol:
GD50FSY120L3S

Specification

Manufacturer
STARPOWER SEMICONDUCTOR
Type of semiconductor module
IGBT
Semiconductor structure
transistor/transistor
Topology
IGBT three-phase bridge OE output, NTC thermistor
Max. off-state voltage
1.2kV
Collector current
50A
Case
L3.2
Electrical mounting
Press-in PCB
Gate-emitter voltage
±20V
Pulsed collector current
100A
Technology
Advanced Trench FS IGBT
Mechanical mounting
screw
Gross weight39 g
Certificates
See other products in this category: IGBT modules STARPOWER SEMICONDUCTOR,
*
GD50FSY120L3S
0 in TME stock
No. of pieces (Multiplicity: 16)
Product for special order