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Manufacturer	INFINEON TECHNOLOGIES
Type of transistor	N-MOSFET
Technology	HEXFET®
Polarisation	unipolar
Drain-source voltage	40V
Drain current	100A
Power dissipation	170W
Case	TO220AB
Gate-source voltage	±20V
On-state resistance	9mΩ
Mounting	THT
Gate charge	62nC
Kind of package	tube
Kind of channel	enhancement

IRF1104PBF

Transistor: N-MOSFET; unipolar; 40V; 100A; 170W; TO220AB

Specification