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Manufacturer	INFINEON TECHNOLOGIES
Type of transistor	N-MOSFET
Technology	HEXFET®
Polarisation	unipolar
Drain-source voltage	20V
Drain current	5.7A
Power dissipation	1.8W
Case	SO8
Mounting	SMD
Kind of package	reel
Kind of channel	enhancement

IRF7601TRPBF

Transistor: N-MOSFET; unipolar; 20V; 5.7A; 1.8W; SO8

Specification