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Manufacturer	VISHAY
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	1kV
Drain current	3.1A
Power dissipation	125W
Case	TO220-3
Gate-source voltage	±20V
On-state resistance	5Ω
Mounting	THT
Gate charge	80nC
Kind of channel	enhancement

IRFBG30PBF-BE3

Transistor: N-MOSFET; unipolar; 1kV; 3.1A; 125W; TO220-3

Specification