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Manufacturer	VISHAY
Type of transistor	P-MOSFET
Polarisation	unipolar
Drain-source voltage	-200V
Drain current	-250mA
Power dissipation	1W
Case	DIP4
Gate-source voltage	±20V
On-state resistance	3Ω
Mounting	THT
Gate charge	8.9nC
Kind of channel	enhancement

IRFD9210PBF

Transistor: P-MOSFET; unipolar; -200V; -0.25A; 1W; DIP4

Specification