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Manufacturer	INFINEON TECHNOLOGIES
Type of transistor	N-MOSFET
Technology	HEXFET®
Polarisation	unipolar
Drain-source voltage	60V
Drain current	200A
Power dissipation	280W
Case	TO247AC
Gate-source voltage	±20V
On-state resistance	3mΩ
Mounting	THT
Gate charge	0.12µC
Kind of package	tube
Kind of channel	enhancement

IRFP3206PBF

Transistor: N-MOSFET; unipolar; 60V; 200A; 280W; TO247AC

Specification