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Manufacturer | INFINEON TECHNOLOGIES | |
Type of transistor | N-MOSFET | |
Technology | HEXFET® | |
Polarisation | unipolar | |
Drain-source voltage | 60V | |
Drain current | 270A | |
Power dissipation | 380W | |
Case | TO220AB | |
Gate-source voltage | ±16V | |
On-state resistance | 2.4mΩ | |
Mounting | THT | |
Gate charge | 91nC | |
Kind of package | tube | |
Kind of channel | enhancement | |
Features of semiconductor devices | logic level |