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Manufacturer | INFINEON TECHNOLOGIES | |
Type of transistor | N-MOSFET | |
Technology | HEXFET® | |
Polarisation | unipolar | |
Drain-source voltage | 55V | |
Drain current | 4A | |
Pulsed drain current | 40A | |
Power dissipation | 1W | |
Case | SOT223 | |
Gate-source voltage | ±16V | |
On-state resistance | 60mΩ | |
Mounting | SMD | |
Gate charge | 11nC | |
Kind of package | reel | |
Kind of channel | enhancement |