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ISO5851DW

IC: driver; IGBT half-bridge,MOSFET half-bridge; SO16-W; -5÷2.5A

Documentation EN
Product family

Manufacturer: TEXAS INSTRUMENTS

Manufacturer part number:
ISO5851DW
TME Symbol:
ISO5851DW

Specification

Manufacturer
TEXAS INSTRUMENTS
Type of integrated circuit
driver
Topology
IGBT half-bridge, MOSFET half-bridge
Kind of integrated circuit
gate driver, high-/low-side
Case
SO16-W
Output current
-5...2.5A
Number of channels
2
Integrated circuit features
galvanically isolated
Mounting
SMD
Operating temperature
-40...125°C
Impulse rise time
35ns
Pulse fall time
37ns
Input voltage
3...5.5V
Kind of package
tube
Protection
undervoltage UVP
Insulation voltage
5.7kV
Supply voltage
  • 15...30V DC
Gross weight0.1 g
Certificates
See other products in this category: MOSFET/IGBT drivers TEXAS INSTRUMENTS,
*
ISO5851DW
0 in TME stock
Net price for quantities from 1 pcs - 7.56 USDGross price for quantities from 1 pcs - 7.56 USD
Net price for quantities from 3 pcs - 6.80 USDGross price for quantities from 3 pcs - 6.80 USD
Net price for quantities from 10 pcs - 6.01 USDGross price for quantities from 10 pcs - 6.01 USD
Net price for quantities from 40 pcs - 5.59 USDGross price for quantities from 40 pcs - 5.59 USD
No. of pieces (Multiplicity: 1)
Packaging method by the manufacturerTube = 40 pcs