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Product family

IXA20PG1200DHGLB

Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV

Manufacturer: IXYS

Manufacturer part number:
IXA20PG1200DHGLB
TME Symbol:
IXA20PG1200DHGLB

Specification

Manufacturer
IXYS
Type of semiconductor module
IGBT
Semiconductor structure
diode/transistor
Topology
IGBT half-bridge
Max. off-state voltage
1.2kV
Collector current
23A
Case
SMPD-B
Electrical mounting
SMT
Gate-emitter voltage
±20V
Pulsed collector current
45A
Power dissipation
130W
Technology
ISOPLUS™, Sonic FRD™
Gross weight7.983 g
Certificates
See other products in this category: IGBT modules IXYS,
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IXA20PG1200DHGLB
22 in TME stock
Net price for quantities from 1 pcs - 9.66 USDGross price for quantities from 1 pcs - 9.66 USD
Net price for quantities from 3 pcs - 8.47 USDGross price for quantities from 3 pcs - 8.47 USD
Net price for quantities from 10 pcs - 8.07 USDGross price for quantities from 10 pcs - 8.07 USD
No. of pieces (Multiplicity: 1)
Product available till the stock lasts
Packaging method by the manufacturerTube = 20 pcs