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IXBF20N300

Transistor: IGBT; BiMOSFET™; 3kV; 34A; 150W; ISOPLUS i4-pac™ x024c

Manufacturer: IXYS

Manufacturer part number:
IXBF20N300
TME Symbol:
IXBF20N300

Specification

Manufacturer
IXYS
Type of transistor
IGBT
Technology
BiMOSFET™
Collector-emitter voltage
3kV
Collector current
34A
Power dissipation
150W
Case
ISOPLUS i4-pac™ x024c
Gate-emitter voltage
±20V
Pulsed collector current
130A
Mounting
THT
Gate charge
105nC
Kind of package
tube
Turn-on time
64ns
Turn-off time
0.3µs
Features of semiconductor devices
high voltage
Gross weight5.64 g
Certificates
See other products in this category: THT IGBT transistors IXYS,
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IXBF20N300
0 in TME stock
Net price for quantities from 1 pcs - 67.16 USDGross price for quantities from 1 pcs - 67.16 USD
Net price for quantities from 3 pcs - 61.43 USDGross price for quantities from 3 pcs - 61.43 USD
Net price for quantities from 10 pcs - 57.33 USDGross price for quantities from 10 pcs - 57.33 USD
No. of pieces (Multiplicity: 1)
Packaging method by the manufacturerTube = 25 pcs