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Manufacturer	IXYS
Type of transistor	IGBT
Technology	BiMOSFET™
Collector-emitter voltage	3.6kV
Collector current	20A
Power dissipation	230W
Case	ISOPLUS i4-pac™ x024c
Gate-emitter voltage	±20V
Pulsed collector current	220A
Mounting	THT
Gate charge	110nC
Kind of package	tube
Features of semiconductor devices	high voltage

IXBF20N360

Transistor: IGBT; BiMOSFET™; 3.6kV; 20A; 230W

Specification