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IXBH20N300

Transistor: IGBT; BiMOSFET™; 3kV; 50A; 250W; TO247-3


Manufacturer: IXYS

Manufacturer part number:
IXBH20N300
TME Symbol:
IXBH20N300

Specification

Manufacturer
IXYS
Type of transistor
IGBT
Technology
BiMOSFET™
Collector-emitter voltage
3kV
Collector current
50A
Power dissipation
250W
Case
TO247-3
Gate-emitter voltage
±20V
Pulsed collector current
130A
Mounting
THT
Gate charge
105nC
Kind of package
tube
Turn-on time
64ns
Turn-off time
0.3µs
Features of semiconductor devices
high voltage
Gross weight6.135 g
Certificates
See other products in this category: THT IGBT transistors IXYS,
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IXBH20N300
0 in TME stock
Net price for quantities from 1 pcs - 80.96 USDGross price for quantities from 1 pcs - 80.96 USD
Net price for quantities from 10 pcs - 75.86 USDGross price for quantities from 10 pcs - 75.86 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Packaging method by the manufacturerTube = 30 pcs