IXBH2N250
Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO247-3
Manufacturer: IXYS
Manufacturer part number:
IXBH2N250
TME Symbol:
IXBH2N250
Specification
Manufacturer | IXYS | |
Type of transistor | IGBT | |
Technology | BiMOSFET™ | |
Collector-emitter voltage | 2.5kV | |
Collector current | 2A | |
Power dissipation | 32W | |
Case | TO247-3 | |
Gate-emitter voltage | ±20V | |
Pulsed collector current | 13A | |
Mounting | THT | |
Gate charge | 10.6nC | |
Kind of package | tube | |
Turn-on time | 310ns | |
Turn-off time | 252ns | |
Features of semiconductor devices | high voltage |
Gross weight1 g
Certificates
See other products in this category: THT IGBT transistors IXYS,
* IXBH2N250No. of pieces (Multiplicity: 300)
0 in TME stock
Net price for quantities from 300 pcs - 6.95 USDGross price for quantities from 300 pcs - 6.95 USD