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Manufacturer	IXYS
Type of transistor	IGBT
Technology	BiMOSFET™, FRED
Collector-emitter voltage	1.7kV
Collector current	42A
Power dissipation	360W
Case	TO247-3
Gate-emitter voltage	±20V
Pulsed collector current	300A
Mounting	THT
Gate charge	188nC
Kind of package	tube
Turn-on time	224ns
Turn-off time	1.07µs
Features of semiconductor devices	high voltage

IXBH42N170

Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; TO247-3

Specification