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IXBH6N170

Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; TO247-3

Manufacturer: IXYS

Manufacturer part number:
IXBH6N170
TME Symbol:
IXBH6N170

Specification

Manufacturer
IXYS
Type of transistor
IGBT
Technology
BiMOSFET™
Collector-emitter voltage
1.7kV
Collector current
6A
Power dissipation
75W
Case
TO247-3
Gate-emitter voltage
±20V
Pulsed collector current
36A
Mounting
THT
Gate charge
17nC
Kind of package
tube
Turn-on time
104ns
Turn-off time
700ns
Features of semiconductor devices
high voltage
Gross weight6.11 g
Certificates
See other products in this category: THT IGBT transistors IXYS,
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IXBH6N170
0 in TME stock
Net price for quantities from 1 pcs - 9.13 USDGross price for quantities from 1 pcs - 9.13 USD
Net price for quantities from 3 pcs - 8.20 USDGross price for quantities from 3 pcs - 8.20 USD
Net price for quantities from 10 pcs - 7.65 USDGross price for quantities from 10 pcs - 7.65 USD
Net price for quantities from 30 pcs - 7.38 USDGross price for quantities from 30 pcs - 7.38 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Packaging method by the manufacturerTube = 30 pcs