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IXBK55N300

Transistor: IGBT; BiMOSFET™; 3kV; 55A; 625W; TO264


Manufacturer: IXYS

Manufacturer part number:
IXBK55N300
TME Symbol:
IXBK55N300

Specification

Manufacturer
IXYS
Type of transistor
IGBT
Technology
BiMOSFET™
Collector-emitter voltage
3kV
Collector current
55A
Power dissipation
625W
Case
TO264
Gate-emitter voltage
±20V
Pulsed collector current
600A
Mounting
THT
Gate charge
335nC
Kind of package
tube
Turn-on time
637ns
Turn-off time
475ns
Features of semiconductor devices
high voltage
Gross weight9.87 g
Certificates
See other products in this category: THT IGBT transistors IXYS,
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IXBK55N300
11 in TME stock
Net price for quantities from 1 pcs - 97.31 USDGross price for quantities from 1 pcs - 97.31 USD
Net price for quantities from 10 pcs - 93.81 USDGross price for quantities from 10 pcs - 93.81 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Packaging method by the manufacturerTube = 25 pcs