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Manufacturer | IXYS | |
Type of transistor | IGBT | |
Technology | BiMOSFET™, FRED | |
Collector-emitter voltage | 2.5kV | |
Collector current | 64A | |
Power dissipation | 735W | |
Case | TO264 | |
Gate-emitter voltage | ±25V | |
Pulsed collector current | 600A | |
Mounting | THT | |
Gate charge | 400nC | |
Kind of package | tube | |
Turn-on time | 632ns | |
Turn-off time | 397ns | |
Features of semiconductor devices | high voltage |