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IXBK75N170

Transistor: IGBT; BiMOSFET™; 1.7kV; 75A; 1.04kW; TO264

Manufacturer: IXYS

Manufacturer part number:
IXBK75N170
TME Symbol:
IXBK75N170

Specification

Manufacturer
IXYS
Type of transistor
IGBT
Technology
BiMOSFET™
Collector-emitter voltage
1.7kV
Collector current
75A
Power dissipation
1.04kW
Case
TO264
Gate-emitter voltage
±20V
Pulsed collector current
580A
Mounting
THT
Gate charge
0.35µC
Kind of package
tube
Turn-on time
277ns
Turn-off time
840ns
Features of semiconductor devices
high voltage
Gross weight9.83 g
Certificates
See other products in this category: THT IGBT transistors IXYS,
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IXBK75N170
0 in TME stock
Net price for quantities from 1 pcs - 68.61 USDGross price for quantities from 1 pcs - 68.61 USD
Net price for quantities from 5 pcs - 62.92 USDGross price for quantities from 5 pcs - 62.92 USD
Net price for quantities from 10 pcs - 59.26 USDGross price for quantities from 10 pcs - 59.26 USD
Net price for quantities from 25 pcs - 56.78 USDGross price for quantities from 25 pcs - 56.78 USD
No. of pieces (Multiplicity: 1)
Packaging method by the manufacturerTube = 25 pcs