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Documentation EN
Product family

IXBN75N170

Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 75A; SOT227B

Manufacturer: IXYS

Manufacturer part number:
IXBN75N170
TME Symbol:
IXBN75N170

Specification

Manufacturer
IXYS
Type of semiconductor module
IGBT
Semiconductor structure
single transistor
Max. off-state voltage
1.7kV
Collector current
75A
Case
SOT227B
Electrical mounting
screw
Gate-emitter voltage
±20V
Pulsed collector current
680A
Power dissipation
625W
Technology
BiMOSFET™
Features of semiconductor devices
high voltage
Mechanical mounting
screw
Gross weight37.09 g
Certificates
See other products in this category: IGBT modules IXYS,
*
IXBN75N170
1 in TME stock
Net price for quantities from 1 pcs - 112.13 USDGross price for quantities from 1 pcs - 112.13 USD
Net price for quantities from 3 pcs - 100.75 USDGross price for quantities from 3 pcs - 100.75 USD
Net price for quantities from 10 pcs - 94.03 USDGross price for quantities from 10 pcs - 94.03 USD
No. of pieces (Multiplicity: 1)
Packaging method by the manufacturerTube = 10 pcs