IXBT24N170
Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO268
Manufacturer: IXYS
Manufacturer part number:
IXBT24N170
TME Symbol:
IXBT24N170
Specification
Manufacturer | IXYS | |
Type of transistor | IGBT | |
Technology | BiMOSFET™ | |
Collector-emitter voltage | 1.7kV | |
Collector current | 24A | |
Power dissipation | 250W | |
Case | TO268 | |
Gate-emitter voltage | ±20V | |
Pulsed collector current | 230A | |
Mounting | SMD | |
Gate charge | 0.14µC | |
Kind of package | tube | |
Turn-on time | 190ns | |
Turn-off time | 1285ns | |
Features of semiconductor devices | high voltage |
Gross weight4.08 g
Certificates
See other products in this category: SMD IGBT transistors IXYS,
* IXBT24N170No. of pieces (Multiplicity: 1)
23 in TME stock
Net price for quantities from 1 pcs - 17.89 USDGross price for quantities from 1 pcs - 17.89 USD
Net price for quantities from 3 pcs - 16.06 USDGross price for quantities from 3 pcs - 16.06 USD
Net price for quantities from 10 pcs - 15.01 USDGross price for quantities from 10 pcs - 15.01 USD
Net price for quantities from 30 pcs - 14.45 USDGross price for quantities from 30 pcs - 14.45 USD
Product available till the stock lasts
Packaging method by the manufacturerTube = 30 pcs