IXBT42N170A
Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO268
Manufacturer: IXYS
Manufacturer part number:
IXBT42N170A
TME Symbol:
IXBT42N170A
Specification
Manufacturer | IXYS | |
Type of transistor | IGBT | |
Technology | BiMOSFET™ | |
Collector-emitter voltage | 1.7kV | |
Collector current | 21A | |
Power dissipation | 357W | |
Case | TO268 | |
Gate-emitter voltage | ±20V | |
Pulsed collector current | 265A | |
Mounting | SMD | |
Gate charge | 188nC | |
Kind of package | tube | |
Turn-on time | 33ns | |
Turn-off time | 308ns | |
Features of semiconductor devices | high voltage |
Gross weight4.06 g
Certificates
See other products in this category: SMD IGBT transistors IXYS,
* IXBT42N170ANo. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 1 pcs - 32.10 USDGross price for quantities from 1 pcs - 32.10 USD
Net price for quantities from 3 pcs - 28.38 USDGross price for quantities from 3 pcs - 28.38 USD
Net price for quantities from 10 pcs - 25.47 USDGross price for quantities from 10 pcs - 25.47 USD
Net price for quantities from 30 pcs - 23.73 USDGross price for quantities from 30 pcs - 23.73 USD
Packaging method by the manufacturerTube = 30 pcs