IXBX75N170
Transistor: IGBT; BiMOSFET™; 1.7kV; 75A; 1.04kW; PLUS247™
Manufacturer: IXYS
Manufacturer part number:
IXBX75N170
TME Symbol:
IXBX75N170
Specification
Manufacturer | IXYS | |
Type of transistor | IGBT | |
Technology | BiMOSFET™, FRED | |
Collector-emitter voltage | 1.7kV | |
Collector current | 75A | |
Power dissipation | 1.04kW | |
Case | PLUS247™ | |
Gate-emitter voltage | ±20V | |
Pulsed collector current | 580A | |
Mounting | THT | |
Gate charge | 0.35µC | |
Kind of package | tube | |
Turn-on time | 277ns | |
Turn-off time | 840ns | |
Features of semiconductor devices | high voltage |
Gross weight6.78 g
Certificates
See other products in this category: THT IGBT transistors IXYS,
* IXBX75N170No. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 1 pcs - 63.70 USDGross price for quantities from 1 pcs - 63.70 USD
Net price for quantities from 10 pcs - 59.54 USDGross price for quantities from 10 pcs - 59.54 USD
Net price for quantities from 30 pcs - 56.75 USDGross price for quantities from 30 pcs - 56.75 USD
Hardly available product
Packaging method by the manufacturerTube = 30 pcs