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IXFA10N60P

Transistor: N-MOSFET; Polar™; unipolar; 600V; 10A; 200W; TO263

Documentation EN
Product family

Manufacturer: IXYS

Manufacturer part number:
IXFA10N60P
TME Symbol:
IXFA10N60P

Specification

Manufacturer
IXYS
Type of transistor
N-MOSFET
Technology
HiPerFET™, Polar™
Polarisation
unipolar
Drain-source voltage
600V
Drain current
10A
Power dissipation
200W
Case
TO263
On-state resistance
0.74Ω
Mounting
SMD
Gate charge
32nC
Kind of package
tube
Kind of channel
enhancement
Reverse recovery time
120ns
Gross weight1.533 g
Certificates
See other products in this category: SMD N channel transistors IXYS,
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IXFA10N60P
0 in TME stock
Net price for quantities from 1 pcs - 4.87 USDGross price for quantities from 1 pcs - 4.87 USD
Net price for quantities from 50 pcs - 2.53 USDGross price for quantities from 50 pcs - 2.53 USD
Net price for quantities from 100 pcs - 2.44 USDGross price for quantities from 100 pcs - 2.44 USD
Net price for quantities from 500 pcs - 2.30 USDGross price for quantities from 500 pcs - 2.30 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Packaging method by the manufacturerTube = 50 pcs