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IXFA4N100P

Transistor: N-MOSFET; Polar™; unipolar; 1kV; 4A; 150W; TO263

Documentation EN
Product family

Manufacturer: IXYS

Manufacturer part number:
IXFA4N100P
TME Symbol:
IXFA4N100P

Specification

Manufacturer
IXYS
Type of transistor
N-MOSFET
Technology
HiPerFET™, Polar™
Polarisation
unipolar
Drain-source voltage
1kV
Drain current
4A
Power dissipation
150W
Case
TO263
Mounting
SMD
Gate charge
26nC
Kind of package
tube
Kind of channel
enhancement
Gross weight1.49 g
Certificates
See other products in this category: SMD N channel transistors IXYS,
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IXFA4N100P
0 in TME stock
Net price for quantities from 1 pcs - 5.14 USDGross price for quantities from 1 pcs - 5.14 USD
Net price for quantities from 50 pcs - 2.50 USDGross price for quantities from 50 pcs - 2.50 USD
Net price for quantities from 100 pcs - 2.40 USDGross price for quantities from 100 pcs - 2.40 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Packaging method by the manufacturerTube = 50 pcs