+1 500 000 products in offer

7000 packages per day

+300 000 clients from 150 countries

You have questions? Call us 678.691.2347 (Mon-Fri 8:00AM - 6:00PM EDT)

Quick Buy Favourites

No U.S. Customs – Order from TME with Confidence

Here you will find out more

Data processing in progress

Your credit limit has been exceeded. Your order will be accepted but not realized. The delivery schedule will not be set. Please contact a TME employee.

The task was successfully completed.

An unexpected error ocurred. Please try again.

Manufacturer	IXYS
Type of transistor	N-MOSFET
Technology	HiPerFET™
Polarisation	unipolar
Drain-source voltage	1kV
Drain current	4A
Pulsed drain current	16A
Power dissipation	150W
Case	TO263AA
Gate-source voltage	±20V
On-state resistance	3Ω
Mounting	SMD
Gate charge	39nC
Kind of channel	enhancement
Reverse recovery time	250ns

IXFA4N100Q

Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 150W; TO263AA

Specification