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IXFA7N80P

Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns


Manufacturer: IXYS

Manufacturer part number:
IXFA7N80P
TME Symbol:
IXFA7N80P

Specification

Manufacturer
IXYS
Type of transistor
N-MOSFET
Technology
HiPerFET™, Polar™
Polarisation
unipolar
Drain-source voltage
800V
Drain current
7A
Power dissipation
200W
Case
TO263
Gate-source voltage
±30V
On-state resistance
1.44Ω
Mounting
SMD
Gate charge
32nC
Kind of package
tube
Kind of channel
enhancement
Reverse recovery time
250ns
Gross weight1.538 g
Certificates
See other products in this category: SMD N channel transistors IXYS,
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IXFA7N80P
9 in TME stock
Net price for quantities from 1 pcs - 4.99 USDGross price for quantities from 1 pcs - 4.99 USD
Net price for quantities from 50 pcs - 2.64 USDGross price for quantities from 50 pcs - 2.64 USD
Net price for quantities from 100 pcs - 2.41 USDGross price for quantities from 100 pcs - 2.41 USD
Net price for quantities from 500 pcs - 2.25 USDGross price for quantities from 500 pcs - 2.25 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Packaging method by the manufacturerTube = 50 pcs