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Manufacturer	IXYS
Type of transistor	N-MOSFET
Technology	HiPerFET™, Polar™
Polarisation	unipolar
Drain-source voltage	300V
Drain current	170A
Power dissipation	1.25kW
Case	PLUS264™
Gate-source voltage	±20V
On-state resistance	18mΩ
Mounting	THT
Gate charge	258nC
Kind of package	tube
Kind of channel	enhancement
Reverse recovery time	200ns

IXFB170N30P

Transistor: N-MOSFET; Polar™; unipolar; 300V; 170A; 1250W; PLUS264™

Specification