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IXFB52N90P

Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™

Documentation EN
Product family

Manufacturer: IXYS

Manufacturer part number:
IXFB52N90P
TME Symbol:
IXFB52N90P

Specification

Manufacturer
IXYS
Type of transistor
N-MOSFET
Technology
HiPerFET™, Polar™
Polarisation
unipolar
Drain-source voltage
900V
Drain current
52A
Power dissipation
1.25kW
Case
PLUS264™
Gate-source voltage
±30V
On-state resistance
0.16Ω
Mounting
THT
Gate charge
308nC
Kind of package
tube
Kind of channel
enhancement
Reverse recovery time
300ns
Gross weight10.23 g
Certificates
See other products in this category: THT N channel transistors IXYS,
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IXFB52N90P
0 in TME stock
Net price for quantities from 1 pcs - 35.05 USDGross price for quantities from 1 pcs - 35.05 USD
Net price for quantities from 10 pcs - 33.42 USDGross price for quantities from 10 pcs - 33.42 USD
Net price for quantities from 25 pcs - 31.09 USDGross price for quantities from 25 pcs - 31.09 USD
Net price for quantities from 100 pcs - 30.28 USDGross price for quantities from 100 pcs - 30.28 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Hardly available product
Packaging method by the manufacturerTube = 25 pcs