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Manufacturer	IXYS
Type of transistor	N-MOSFET
Technology	HiPerFET™, X-Class
Polarisation	unipolar
Drain-source voltage	850V
Drain current	90A
Power dissipation	1.785kW
Case	PLUS264™
Gate-source voltage	±30V
On-state resistance	41mΩ
Mounting	THT
Gate charge	340nC
Kind of package	tube
Kind of channel	enhancement
Reverse recovery time	250ns

IXFB90N85X

Transistor: N-MOSFET; X-Class; unipolar; 850V; 90A; 1785W; PLUS264™

Specification