IXFN200N10P
Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 400A
Manufacturer: IXYS
Manufacturer part number:
IXFN200N10P
TME Symbol:
IXFN200N10P
Specification
Manufacturer | IXYS | |
Type of semiconductor module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 100V | |
Drain current | 200A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 7.5mΩ | |
Pulsed drain current | 400A | |
Power dissipation | 680W | |
Technology | HiPerFET™, Polar™ | |
Kind of channel | enhancement | |
Gate charge | 235nC | |
Reverse recovery time | 150ns | |
Gate-source voltage | ±30V | |
Mechanical mounting | screw |
Gross weight37.04 g
Certificates
See other products in this category: Transistor modules IXYS,
* IXFN200N10PNo. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 1 pcs - 26.63 USDGross price for quantities from 1 pcs - 26.63 USD
Net price for quantities from 5 pcs - 23.66 USDGross price for quantities from 5 pcs - 23.66 USD
Net price for quantities from 10 pcs - 22.83 USDGross price for quantities from 10 pcs - 22.83 USD
Packaging method by the manufacturerTube = 10 pcs