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Manufacturer	IXYS
Type of semiconductor module	MOSFET transistor
Semiconductor structure	single transistor
Drain-source voltage	1kV
Drain current	38A
Case	SOT227B
Electrical mounting	screw
Polarisation	unipolar
On-state resistance	0.22Ω
Pulsed drain current	110A
Power dissipation	960W
Technology	HiPerFET™, Q3-Class
Kind of channel	enhancement
Gate charge	264nC
Reverse recovery time	300ns
Gate-source voltage	±40V
Mechanical mounting	screw

IXFN44N100Q3

Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 110A; 960W

Specification