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IXFP7N100P

Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO220AB


Manufacturer: IXYS

Manufacturer part number:
IXFP7N100P
TME Symbol:
IXFP7N100P

Specification

Manufacturer
IXYS
Type of transistor
N-MOSFET
Technology
HiPerFET™, Polar™
Polarisation
unipolar
Drain-source voltage
1kV
Drain current
7A
Power dissipation
300W
Case
TO220AB
Gate-source voltage
±30V
On-state resistance
1.9Ω
Mounting
THT
Gate charge
47nC
Kind of package
tube
Kind of channel
enhancement
Reverse recovery time
300ns
Gross weight2.043 g
Certificates
See other products in this category: THT N channel transistors IXYS,
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IXFP7N100P
299 in TME stock
Net price for quantities from 1 pcs - 7.50 USDGross price for quantities from 1 pcs - 7.50 USD
Net price for quantities from 10 pcs - 4.93 USDGross price for quantities from 10 pcs - 4.93 USD
Net price for quantities from 50 pcs - 4.67 USDGross price for quantities from 50 pcs - 4.67 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Packaging method by the manufacturerTube = 50 pcs