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IXGF25N250

Transistor: IGBT; 2.5kV; 30A; 114W; i4-pac

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Manufacturer: IXYS

Manufacturer part number:
IXGF25N250
TME Symbol:
IXGF25N250

Specification

Manufacturer
IXYS
Type of transistor
IGBT
Collector-emitter voltage
2.5kV
Collector current
30A
Power dissipation
114W
Case
i4-pac
Gate-emitter voltage
±20V
Pulsed collector current
200A
Mounting
THT
Gate charge
75nC
Kind of package
tube
Gross weight1 g
Certificates
See other products in this category: THT IGBT transistors IXYS,
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IXGF25N250
0 in TME stock
Net price for quantities from 300 pcs - 101.16 USDGross price for quantities from 300 pcs - 101.16 USD
No. of pieces (Multiplicity: 300)
Minimum order quantity: 300.
Multiplicity: 300.