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IXGF32N170

Transistor: IGBT; NPT; 1.7kV; 19A; 200W; ISOPLUS i4-pac™ x024c

Manufacturer: IXYS

Manufacturer part number:
IXGF32N170
TME Symbol:
IXGF32N170

Specification

Manufacturer
IXYS
Type of transistor
IGBT
Technology
NPT
Collector-emitter voltage
1.7kV
Collector current
19A
Power dissipation
200W
Case
ISOPLUS i4-pac™ x024c
Gate-emitter voltage
±20V
Pulsed collector current
200A
Mounting
THT
Gate charge
146nC
Kind of package
tube
Turn-on time
90ns
Turn-off time
920ns
Features of semiconductor devices
high voltage
Gross weight8 g
Certificates
See other products in this category: THT IGBT transistors IXYS,
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IXGF32N170
0 in TME stock
Net price for quantities from 1 pcs - 25.43 USDGross price for quantities from 1 pcs - 25.43 USD
Net price for quantities from 5 pcs - 22.54 USDGross price for quantities from 5 pcs - 22.54 USD
Net price for quantities from 10 pcs - 20.64 USDGross price for quantities from 10 pcs - 20.64 USD
No. of pieces (Multiplicity: 1)