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IXGH50N90B2

Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3

Manufacturer: IXYS

Manufacturer part number:
IXGH50N90B2
TME Symbol:
IXGH50N90B2

Specification

Manufacturer
IXYS
Type of transistor
IGBT
Technology
HiPerFAST™, XPT™
Collector-emitter voltage
900V
Collector current
50A
Power dissipation
400W
Case
TO247-3
Gate-emitter voltage
±20V
Pulsed collector current
200A
Mounting
THT
Gate charge
135nC
Kind of package
tube
Turn-on time
48ns
Turn-off time
820ns
Gross weight6.117 g
Certificates
See other products in this category: THT IGBT transistors IXYS,
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IXGH50N90B2
120 in TME stock
Net price for quantities from 1 pcs - 7.47 USDGross price for quantities from 1 pcs - 7.47 USD
Net price for quantities from 3 pcs - 6.72 USDGross price for quantities from 3 pcs - 6.72 USD
Net price for quantities from 10 pcs - 5.94 USDGross price for quantities from 10 pcs - 5.94 USD
Net price for quantities from 30 pcs - 5.34 USDGross price for quantities from 30 pcs - 5.34 USD
No. of pieces (Multiplicity: 1)
Product available till the stock lasts
Packaging method by the manufacturerTube = 30 pcs