IXGT10N170
Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO268
Manufacturer: IXYS
Manufacturer part number:
IXGT10N170
TME Symbol:
IXGT10N170
Specification
Manufacturer | IXYS | |
Type of transistor | IGBT | |
Technology | NPT | |
Collector-emitter voltage | 1.7kV | |
Collector current | 10A | |
Power dissipation | 110W | |
Case | TO268 | |
Gate-emitter voltage | ±20V | |
Pulsed collector current | 70A | |
Mounting | SMD | |
Gate charge | 32nC | |
Kind of package | tube | |
Turn-on time | 0.3µs | |
Turn-off time | 630ns | |
Features of semiconductor devices | high voltage |
Gross weight5 g
Certificates
See other products in this category: SMD IGBT transistors IXYS,
* IXGT10N170No. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 1 pcs - 16.71 USDGross price for quantities from 1 pcs - 16.71 USD
Net price for quantities from 3 pcs - 15.58 USDGross price for quantities from 3 pcs - 15.58 USD
Net price for quantities from 10 pcs - 13.00 USDGross price for quantities from 10 pcs - 13.00 USD
Net price for quantities from 30 pcs - 12.36 USDGross price for quantities from 30 pcs - 12.36 USD