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Manufacturer	IXYS
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	40V
Drain current	100A
Power dissipation	150W
Case	TO263
On-state resistance	7mΩ
Mounting	SMD
Kind of package	tube
Kind of channel	enhancement
Features of semiconductor devices	thrench gate power mosfet
Reverse recovery time	34ns

IXTA100N04T2

Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO263; 34ns

Specification