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Manufacturer	IXYS
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	40V
Drain current	160A
Power dissipation	250W
Case	TO263
On-state resistance	5mΩ
Mounting	SMD
Gate charge	79nC
Kind of package	tube
Kind of channel	enhancement
Features of semiconductor devices	thrench gate power mosfet
Reverse recovery time	40ns

IXTA160N04T2

Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO263; 40ns

Specification