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IXTA3N100P

Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 820ns

Manufacturer: IXYS

Manufacturer part number:
IXTA3N100P
TME Symbol:
IXTA3N100P

Specification

Manufacturer
IXYS
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
1kV
Drain current
3A
Power dissipation
125W
Case
TO263
Mounting
SMD
Gate charge
36nC
Kind of package
tube
Kind of channel
enhancement
Features of semiconductor devices
standard power mosfet
Reverse recovery time
820ns
Gross weight2.5 g
Certificates
See other products in this category: SMD N channel transistors IXYS,
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IXTA3N100P
0 in TME stock
Net price for quantities from 1 pcs - 4.17 USDGross price for quantities from 1 pcs - 4.17 USD
Net price for quantities from 3 pcs - 3.75 USDGross price for quantities from 3 pcs - 3.75 USD
Net price for quantities from 10 pcs - 3.32 USDGross price for quantities from 10 pcs - 3.32 USD
Net price for quantities from 50 pcs - 2.98 USDGross price for quantities from 50 pcs - 2.98 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.