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Manufacturer	IXYS
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	1.2kV
Drain current	3A
Power dissipation	200W
Case	TO263
Gate-source voltage	±20V
On-state resistance	4.5Ω
Mounting	SMD
Gate charge	42nC
Kind of package	tube
Kind of channel	enhancement
Reverse recovery time	700ns

IXTA3N120

Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263; 700ns

Specification